Relative intensity noise reduction in InGaAs/InP multiple quantum well lasers with low nonlinear damping

Author

Fukushima, Tom ; Nagarajan, Radhakrishnan ; Bowers, John E. ; Logan, Ralph A. ; Tanbun-Ek, Tawee

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Berkeley, CA, USA

Volume

3

Issue

8

fYear

1991

Firstpage

688

Lastpage

693

Abstract

The authors demonstrate theoretically and experimentally that the relative intensity noise (RIN) of laser diodes can be dramatically reduced by decreasing nonlinear damping in the laser. Four types of InGaAs/InP multiple quantum well (MQW) lasers with different well widths, barrier widths, and numbers of wells were fabricated. By comparing these four types of devices, it is shown that MQW lasers with wider wells, narrower barriers, and larger numbers of wells have smaller nonlinear damping and lower RIN.<>

Keywords

III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductor; InGaAs-InP; InGaAs/InP multiple quantum well lasers; barrier widths; laser diodes; low nonlinear damping; numbers of wells; relative intensity noise; well widths; Acoustical engineering; Damping; Diode lasers; Indium gallium arsenide; Indium phosphide; Laser noise; Laser theory; Noise reduction; Quantum well devices; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.84454

Filename

84454