Title :
Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs
Author :
El-Mamouni, F. ; Zhang, E.X. ; Ball, D.R. ; Sierawski, B. ; King, Michael P. ; Schrimpf, R.D. ; Reed, R.A. ; Alles, Michael L. ; Fleetwood, D.M. ; Linten, D. ; Simoen, Eddy ; Vizkelethy, Gyorgy
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Measured heavy-ion induced current transients are compared for two different junction contact schemes (dumbbell and saddle) in bulk FinFETs. Devices with saddle contacts collect 17% less charge than their counterparts with dumbbell contacts. Transient shunt effects are observed in both bulk and SOI FinFETs with saddle contacts. SOI FinFETs with saddle contacts collect twice as much charge as that generated in the fin. The substrate bias has a large effect on the SOI devices, with the maximum amounts of charge collected when the substrate is negatively biased.
Keywords :
MOSFET; semiconductor junctions; silicon-on-insulator; SOI FinFET; SOI devices; bulk FinFET; charge collection maximum amounts; dumbbell contacts; heavy-ion-induced current transients; junction contact schemes; measured heavy-ion induced current transients; negatively bias substrate; saddle contacts; transient shunt effects; FinFETs; Silicon on insulator technology; Single event transient; Bulk FinFET; SOI FinFET; charge collection; dumbbell contact; ion-beam-induced-charge-collection (IBICC); saddle contact; shunt effect; single event transient (SET); transient-ion-beam-induced-charge-collection (TRIBICC);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2221478
