Title :
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation
Author :
Gerardin, Simone ; Bagatin, Marta ; Paccagnella, Alessandro ; Ferlet-Cavrois, Véronique
Author_Institution :
DEI, Univ. di Padova, Padua, Italy
Abstract :
We study total dose effects in advanced multi- and single-level NAND Flash memories. We discuss retention and functional failures, analyzing the role of floating gate cells and peripheral circuitry, as compared to previous generations. We found that in these new devices, retention errors appear in all program levels. Guidelines on worst-case testing conditions are given.
Keywords :
NAND circuits; dosimetry; flash memories; logic gates; advanced multilevel NAND Flash memories; floating gate cells; peripheral circuitry; single-level NAND Flash memories; size 40 nm; total dose effects; total dose irradiation; Degradation; Flash memory; Nonvolatile memory; Flash memories; floating gate (FG) cells; non-volatile memories; total ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2222928
