Title :
The ´inverted´ gain-levered semiconductor laser-direct modulation with enhanced frequency modulation and suppressed intensity modulation
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A gain-levered semiconductor laser has enhanced efficiencies in both intensity modulation (IM) and frequency modulation (FM). It is shown that by inverting the bias points of the gain and modulation sections, a mode of operation referred to as ´inverted´ gain-lever, the FM efficiency is suppressed. The large FM-to-FM ratio makes it a desirable source for an FM optical transmitter.<>
Keywords :
frequency modulation; optical modulation; population inversion; semiconductor junction lasers; FM optical transmitter; FM-to-FM ratio; bias points; direct modulation; efficiencies; enhanced frequency modulation; inverted gain levered semiconductor laser; suppressed intensity modulation; Frequency modulation; Intensity modulation; Laser modes; Laser noise; Laser theory; Optical modulation; Optical noise; Optical transmitters; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
