DocumentCode :
1341320
Title :
Plasma-induced charging evaluation using SCA and PDM tools
Author :
Karzhavin, Yuri ; Lao, Keith Q. ; Wu, Wei ; Gelatos, Carol
Author_Institution :
White Oak Semicond., Sandston, VA, USA
Volume :
45
Issue :
3
fYear :
1998
fDate :
3/1/1998 12:00:00 AM
Firstpage :
753
Lastpage :
755
Abstract :
Plasma-induced charging has been characterized using unpatterned oxide wafer charging technique. Charging distributions correlate to gate oxide charging damage with antennae structure. Modification of the process by lowering pressure and increasing gas flow led to a significant decrease of the plasma-induced charging and the gate oxide damage
Keywords :
integrated circuit manufacture; integrated circuit measurement; monitoring; plasma applications; sputter etching; surface charging; PDM tool; SCA tool; antennae structure; charging distributions; gate oxide charging damage; plasma-induced charging evaluation; unpatterned oxide wafer charging technique; Current measurement; Monitoring; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma sources; Surface charging; Thickness measurement; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.661238
Filename :
661238
Link To Document :
بازگشت