Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector

Author

Chen, Cheng-Chang ; Chen, Jun-Rong ; Yang, Yi-Chun ; Shih, M.H. ; Kuo, Hao-Chung

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

28

Issue

22

fYear

2010

Firstpage

3189

Lastpage

3192

Abstract

In this study, we demonstrated two-dimensional (2-D) photonic crystal band-edge coupling operation in the ultraviolet wavelength range. The light extraction enhancement was obtained from the photonic crystal structure with an ultraviolet AlN/AlGaN distributed Bragg reflector (UVDBR). The DBR provides a high reflectivity of 85% with 15-nm stopband width. A fivefold enhancement in photoluminescence emission was also achieved compared with the emission from the unpatterned area on the same sample at 374 nm wavelength. We also study the photonic crystal bandedge coupling with finite-difference time-domain and plane-wave expansion methods.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflectors; finite difference time-domain analysis; gallium compounds; photoluminescence; photonic crystals; reflectivity; wide band gap semiconductors; AlN-AlGaN; GaN; band edge coupling; finite difference time domain method; light emission enhancement; light extraction enhancement; photoluminescence emission; photonic crystal; plane wave expansion method; reflectivity; ultraviolet distributed Bragg reflector; wavelength 374 nm; Aluminum gallium nitride; Distributed Bragg reflectors; Finite difference methods; Gallium nitride; Photonic crystals; Surface emitting lasers; Time domain analysis; Band-edge coupling; photonic crystal; ultraviolet distributed Bragg reflector (UVDBR);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2010.2083634

Filename

5593859