Pulse Shape Measurements by On-Chip Sense Amplifiers of Single Event Transients Propagating Through a 90 nm Bulk CMOS Inverter Chain

Author

Hofbauer, Michael ; Schweiger, Kurt ; Dietrich, Horst ; Zimmermann, Horst ; Voss, Kay-Obbe ; Merk, Bruno ; Schmid, Ulrich ; Steininger, Andreas

Author_Institution

Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria

Volume

59

Issue

6

fYear

2012

Firstpage

2778

Lastpage

2784

Abstract

Single event transient (SET) pulse shapes caused by Au ions with an energy of 946 MeV were measured at the microprobe facility at GSI in Darmstadt. Using on-chip sense amplifiers, our novel approach allows observing SET pulse shapes at any interesting circuit node with negligible distortion. We were hence able to accurately trace the propagation of SET pulses through a 90 nm CMOS inverter chain.

Keywords

CMOS integrated circuits; radiation effects; SET pulses; bulk CMOS inverter chain; circuit node; electron volt energy 946 MeV; microprobe facility; on-chip sense amplifiers; pulse shape measurements; radiation effects; semiconductor technologies; single event transients; size 90 nm; CMOS technology; Particle beams; Radiation effects; Single event transient; Analog on-chip measurement; heavy ions; microprobe; particle beams; position dependence; radiation effects in ICs; radiation effects in devices; sense amplifiers; single event effects; single event transient (SET); soft errors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2223233

Filename

6365399