DocumentCode :
1341352
Title :
Device and Architecture Outlook for Beyond CMOS Switches
Author :
Bernstein, Kerry ; Cavin, Ralph K. ; Porod, Wolfgang ; Seabaugh, Alan ; Welser, Jeff
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
98
Issue :
12
fYear :
2010
Firstpage :
2169
Lastpage :
2184
Abstract :
Sooner or later, fundamental limitations destine complementary metal-oxide-semiconductor (CMOS) scaling to a conclusion. A number of unique switches have been proposed as replacements, many of which do not even use electron charge as the state variable. Instead, these nanoscale structures pass tokens in the spin, excitonic, photonic, magnetic, quantum, or even heat domains. Emergent physical behaviors and idiosyncrasies of these novel switches can complement the execution of specific algorithms or workloads by enabling quite unique architectures. Ultimately, exploiting these unusual responses will extend throughput in high-performance computing. Alternative tokens also require new transport mechanisms to replace the conventional chip wire interconnect schemes of charge-based computing. New intrinsic limits to scaling in post-CMOS technologies are likely to be bounded ultimately by thermodynamic entropy and Shannon noise.
Keywords :
CMOS integrated circuits; switches; Shannon noise; beyond CMOS switches; charge-based computing; complementary metal-oxide-semiconductor; high-performance computing; nanoscale structures; thermodynamic entropy; CMOS integrated circuits; CMOS technology; Computer architecture; FETs; Logic gates; Magnetic domains; Performance evaluation; Nanoarchitectures; nanomagnet logic; post-complementary metal–oxide–semiconductor (CMOS); pseudospin; quantum-dot cellular automata; quantum-dot cellular-automata architectures (QCAs); spin; tunnel field-effect transistor (TFET); tunneling;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2010.2066530
Filename :
5593862
Link To Document :
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