Sampling phase detector using a resonant tunneling high electron mobility transistor for microwave phase-locked oscillators

Author

Okazaki, Hiroshi ; Nakagawa, Tadao ; Muraguchi, Masahiro ; Fukuyama, Hiroyuki ; Maezawa, Koichi ; Yamamoto, Masafumi

Author_Institution

NTT Wireless Syst. Labs., Kanagawa, Japan

Volume

6

Issue

1

fYear

1998

fDate

3/1/1998 12:00:00 AM

Firstpage

39

Lastpage

42

Abstract

A novel sampling phase detector (SPD) using a resonant-tunneling high electron mobility transistor (RTHEMT), which features strong nonlinear characteristics, is proposed and demonstrated as a means of achieving a simple, low-power-consumption SPD. We confirmed promising performance for an RTHEMT as a simple pulse generator in an SPD with low power consumption, even for a low reference-signal input level. An 11-GHz phase-locked oscillator is constructed along with the present SPD, and successfully phase-locked signals are obtained with it. These results clearly show the potential of constructing high-performance analog RF circuits based on RTHEMTs.

Keywords

detector circuits; high electron mobility transistors; microwave circuits; microwave oscillators; phase locked oscillators; pulse generators; resonant tunnelling transistors; 11 GHz; high-performance analog RF circuits; low reference-signal input level; microwave phase-locked oscillators; nonlinear characteristics; phase-locked oscillator; power consumption; pulse generator; resonant tunneling high electron mobility transistor; sampling phase detector; Detectors; Electrons; Energy consumption; HEMTs; MODFETs; Oscillators; Phase detection; Pulse generation; Resonant tunneling devices; Sampling methods;

fLanguage

English

Journal_Title

Very Large Scale Integration (VLSI) Systems, IEEE Transactions on

Publisher

ieee

ISSN

1063-8210

Type

jour

DOI

10.1109/92.661243

Filename

661243