DocumentCode
1341360
Title
A New Type of Ferroelectric Shift Register
Author
Anderson, John R.
Author_Institution
The National Cash Register Co., Dayton, Ohio.
Issue
4
fYear
1956
Firstpage
184
Lastpage
191
Abstract
Ferroelectric shift registers having completely independent parallel or serial inputs and outputs have been designed and constructed. The principal components of these shift registers are single crystals of barium titanate and silicon junction diodes. Two ferroelectric units and two to three silicon junction diodes are required for each stage of the shift register. Practical operating speeds for 10-stage shift registers with transistor drives are at present from 0 to 5 kc. The small size of the ferroelectric units and the low power consumption in this speed range make the ferroelectric shift register attractive for many digital circuit applications.
Keywords
Barium; Buffer storage; Crystals; Diodes; Ferroelectric materials; Hysteresis; Shift registers; Silicon; Titanium compounds; Voltage;
fLanguage
English
Journal_Title
Electronic Computers, IRE Transactions on
Publisher
ieee
ISSN
0367-9950
Type
jour
DOI
10.1109/TEC.1956.5219949
Filename
5219949
Link To Document