• DocumentCode
    1341360
  • Title

    A New Type of Ferroelectric Shift Register

  • Author

    Anderson, John R.

  • Author_Institution
    The National Cash Register Co., Dayton, Ohio.
  • Issue
    4
  • fYear
    1956
  • Firstpage
    184
  • Lastpage
    191
  • Abstract
    Ferroelectric shift registers having completely independent parallel or serial inputs and outputs have been designed and constructed. The principal components of these shift registers are single crystals of barium titanate and silicon junction diodes. Two ferroelectric units and two to three silicon junction diodes are required for each stage of the shift register. Practical operating speeds for 10-stage shift registers with transistor drives are at present from 0 to 5 kc. The small size of the ferroelectric units and the low power consumption in this speed range make the ferroelectric shift register attractive for many digital circuit applications.
  • Keywords
    Barium; Buffer storage; Crystals; Diodes; Ferroelectric materials; Hysteresis; Shift registers; Silicon; Titanium compounds; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electronic Computers, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0367-9950
  • Type

    jour

  • DOI
    10.1109/TEC.1956.5219949
  • Filename
    5219949