Modeling of the X-irradiation Response of the Carrier Relaxation Time in P3HT:PCBM Organic-Based Photocells

Author

Kambour, Kenneth ; Rosen, Nadav ; Kouhestani, Camron ; Nguyen, Duc ; Mayberry, Clay ; Devine, Roderick A B ; Kumar, A. ; Chen, C.-C. ; Li, Gang ; Yang, Yang

Author_Institution

SAIC, Kirtland AFB, NM, USA

Volume

59

Issue

6

fYear

2012

Firstpage

2902

Lastpage

2908

Abstract

Initial experimental work has demonstrated that x-ray bombardment of organic-based photocells (specifically P3HT:PCBM-based) leads to a reduction in the open-circuit voltage (V_oc) without apparent change in the carrier relaxation time. The variation of V_oc was suggested to be due to the injection and trapping of holes near the anode, which resulted in a decrease in the built-in potential. We have extended the experimental measurements to higher total dose (~1300 krad(SiO₂)). Using standard inorganic modeling tools, a device model of the organic cell has been developed and predictions made. These predictions have been compared to the results of the previous and new experimental measurements and they demonstrate reasonable agreement between the two, thereby supporting the initial charge buildup hypothesis. Questions about the origin and behavior of the photo-carrier relaxation arise.

Keywords

X-ray effects; carrier relaxation time; hole mobility; organic semiconductors; solar cells; P3HT:PCBM organic-based photocells; X-irradiation response model; built-in potential; carrier relaxation time; experimental measurements; hole injection; hole trapping; initial charge buildup hypothesis; organic-based photocells; photocarrier relaxation; standard inorganic modeling; x-ray bombardment; Photovoltaic cells; Simulation; X-rays; Simulation; solar cells; x-rays;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2222666

Filename

6365403