• DocumentCode
    1341369
  • Title

    Effect of Negative Bias Temperature Instability on the Single Event Upset Response of 40 nm Flip-Flops

  • Author

    Kauppila, Amy V. ; Bhuva, Bharat L. ; Loveless, T.D. ; Jagannathan, S. ; Gaspard, N.J. ; Kauppila, J.S. ; Massengill, Lloyd W. ; Wen, S.J. ; Wong, R. ; Vaughn, G.L. ; Holman, W. Timothy

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
  • Volume
    59
  • Issue
    6
  • fYear
    2012
  • Firstpage
    2651
  • Lastpage
    2657
  • Abstract
    Negative bias temperature instability has been experimentally demonstrated to increase the cross-section of the single event response for 40 nm flip-flops. Analysis on the underlying mechanisms, including threshold voltage shift, is presented.
  • Keywords
    flip-flops; flip-flops; negative bias temperature instability; single event upset response; size 40 nm; threshold voltage shift; CMOS technology; Flip-flops; Negative bias temperature instability; Single event upset; Threshold voltage; CMOS; negative bias temperature instability (NBTI); process variation; single event effects; single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2224136
  • Filename
    6365404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1341369