Title :
Effect of Negative Bias Temperature Instability on the Single Event Upset Response of 40 nm Flip-Flops
Author :
Kauppila, Amy V. ; Bhuva, Bharat L. ; Loveless, T.D. ; Jagannathan, S. ; Gaspard, N.J. ; Kauppila, J.S. ; Massengill, Lloyd W. ; Wen, S.J. ; Wong, R. ; Vaughn, G.L. ; Holman, W. Timothy
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Negative bias temperature instability has been experimentally demonstrated to increase the cross-section of the single event response for 40 nm flip-flops. Analysis on the underlying mechanisms, including threshold voltage shift, is presented.
Keywords :
flip-flops; flip-flops; negative bias temperature instability; single event upset response; size 40 nm; threshold voltage shift; CMOS technology; Flip-flops; Negative bias temperature instability; Single event upset; Threshold voltage; CMOS; negative bias temperature instability (NBTI); process variation; single event effects; single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2224136
