Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal–Oxide–Silicon Submount

The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO₂ thickness of 297 A¿), and even to a value as high as 1000 V (FC-PLED at a SiO₂ thickness of 167 A¿), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 ¿ A criterion and are also much more robust than the previous academic reports.