Electroabsorption Characteristics of Single-Mode 1.3- $\mu$ m InAs–InGaAs–GaAs Ten-Layer Quantum-Dot Waveguide

InAs-InGaAs-GaAs quantum-dot (QD) structures are extensively investigated for 1.3- lasers with applications in low-cost metropolitan access and local area networks. For the purpose of monolithic integration, realization of QD electroabsorption modulators (EAMs) is equally important. However, there are few research efforts on InAs-InGaAs-GaAs QDs for EAMs. Furthermore, existing results either demonstrate low extinction ratio ( 5 dB) or multimode profile, i.e., unsuitable for practical applications. In this work, we investigated the electroabsorption characteristics of a single-mode 1.3- InAs-InGaAs-GaAs ten-layer QD waveguide. The obtained extinction ratio of 13 dB from the single-mode QD waveguide demonstrates the feasibility of implementing QD-EAM for practical applications. We believe that our findings will be beneficial for researchers working on the monolithic integration of the QD laser and modulator.