DocumentCode
1341395
Title
Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation
Author
Munteanu, D. ; Autran, J.L.
Author_Institution
IM2NP, France
Volume
59
Issue
6
fYear
2012
Firstpage
3249
Lastpage
3257
Abstract
The response to heavy-ion irradiation of FinFET and Multi-Channel Nanowire MOSFET (MC-NWFET) operated with independent gates is investigated by 3-D numerical simulation. The bipolar amplification and charge collection of devices with independent gates are particularly investigated and compared to those of conventional devices having a single surrounding gate. We show that the independent-gate operation of both FinFET and MC-NWFET degrades the device immunity to heavy-ion irradiation.
Keywords
MOSFET; nanowires; 3-D numerical simulation; FinFET heavy-ion irradiation; bipolar amplification simulation analysis; device bipolar amplification; device charge collection; independent-gate FinFET; multichannel NWFET; multichannel nanowire MOSFET; FinFETs; MOSFET circuits; Radiation effects; Simulation; Single event transient; Transient response; Bipolar amplification; FinFET; charge collection; heavy ion irradiation; independent gates; multi-channel nanowire MOSFET; single event transient;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2221740
Filename
6365408
Link To Document