• DocumentCode
    1341410
  • Title

    Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure

  • Author

    Oldham, Timothy R. ; Chen, Dakai ; Friendlich, Mark R. ; LaBel, Kenneth A.

  • Author_Institution
    Dell Services Fed. Gov., Inc., Greenbelt, MD, USA
  • Volume
    59
  • Issue
    6
  • fYear
    2012
  • Firstpage
    3011
  • Lastpage
    3015
  • Abstract
    We have compared the data retention of irradiated commercial NAND flash memories at different doses. Activation energies for retention testing at high temperature have also been determined.
  • Keywords
    NAND circuits; flash memories; radiation effects; activation energies; commercial NAND flash memory; radiation exposure; retention characteristics; retention testing; CMOS technology; Nonvolatile memory; Radiation effects; Reliability; CMOS; nonvolatile memory; radiation effects; reliability; retention;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2221144
  • Filename
    6365410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1341410