Title :
Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure
Author :
Oldham, Timothy R. ; Chen, Dakai ; Friendlich, Mark R. ; LaBel, Kenneth A.
Author_Institution :
Dell Services Fed. Gov., Inc., Greenbelt, MD, USA
Abstract :
We have compared the data retention of irradiated commercial NAND flash memories at different doses. Activation energies for retention testing at high temperature have also been determined.
Keywords :
NAND circuits; flash memories; radiation effects; activation energies; commercial NAND flash memory; radiation exposure; retention characteristics; retention testing; CMOS technology; Nonvolatile memory; Radiation effects; Reliability; CMOS; nonvolatile memory; radiation effects; reliability; retention;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2221144
