Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

Author

Oldham, Timothy R. ; Friendlich, M.R. ; Wilcox, E.P. ; LaBel, K.A. ; Buchner, S.P. ; McMorrow, D. ; Mavis, D.G. ; Eaton, P.H. ; Castillo, J.

Author_Institution

NASA/GSFC, Dell Services Fed. Gov., Inc., Greenbelt, MD, USA

Volume

59

Issue

6

fYear

2012

Firstpage

2831

Lastpage

2836

Abstract

Pulsed laser test results for NAND flash memories are compared with broad beam heavy ion results and also with heavy ion results obtained with the collimated Milli-Beam™ source. The pulsed laser measurements reported here, with smaller focused spot sizes and as a function of the incident pulse energy, serve to reconcile the previously reported inconsistencies. The Milli-Beam™ and pulsed laser results appear to be consistent, and differences from the broad beam heavy ion results can be explained. The results suggest that the high current SEFIs reported by us and others arise from multiple ion (or multiple photon) interactions, and are not associated with single ion strikes.

Keywords

NAND circuits; flash memories; NAND flash memories; broad beam heavy ion; broad beam heavy ion results; collimated MilliBeam source; focused spot sizes; incident pulse energy; pulsed laser measurements; pulsed laser test results; Flash memory; Lasers; Nonvolatile memory; Radiation effects; Reliability; Laser; NAND; nonvolatile memory; radiation effects; reliability;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2222046

Filename

6365411