Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

Author

Place, Sébastien ; Carrere, Jean-Pierre ; Allegret, Stephane ; Magnan, Pierre ; Goiffon, Vincent ; Roy, Francois

Author_Institution

ST Microelectron., Crolles, France

Volume

59

Issue

6

fYear

2012

Firstpage

2888

Lastpage

2893

Abstract

1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with ⁶⁰Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection Pinned Photodiode (EPD). This hardness improvement is mainly attributed to carrier accumulation near the interfaces induced by the generated positive charges in dielectrics. The pre-eminence of this image sensor based on hole collection pinned photodiode architectures in ionizing environments is demonstrated.

Keywords

CMOS image sensors; photodiodes; semiconductor counters; 4T pixel pinned photodiode; ⁶⁰Co source; HPD sensors; commercial sensors; dark current degradation; electron collection pinned photodiode; generated positive charges; hole collection pinned photodiode; hole collection pinned photodiode architectures; pixel pitch CMOS image sensors; rad tolerant CMOS image sensor; Active pixel sensors; CMOS image sensors; CMOS technology; Dark current; Degradation; Radiation effects; APS; Active pixel sensors; CIS; CMOS 4T image sensor; CMOS image sensors; dark current; hole collection pinned photodiode; hole-based detector; pinned photodiode;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2223486

Filename

6365413