Title :
Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors
Author :
Weaver, B.D. ; Martin, P.A. ; Boos, J.B. ; Cress, C.D.
Author_Institution :
Naval Res. Lab. (NRL), Washington, DC, USA
Abstract :
We present the results of a radiation damage experiment on AlxGa1-xN/GaN high electron mobility transistors. The basic mechanism underlying the observed high radiation tolerance appears to be a strong internal piezoelectric field near the two-dimensional electron gas that causes scattered carriers to be reinjected.
Keywords :
high electron mobility transistors; radiation effects; AlGaN; GaN; displacement damage effects; high electron mobility transistors; high radiation tolerance; radiation damage experiment; strong internal piezoelectric ήeld; two-dimensional electron gas; Gallium nitride; HEMTs; Proton radiation effects; Displacement damage; gallium nitride; high electron mobility transistors; proton irradiation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2224371
