• DocumentCode
    1341477
  • Title

    Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

  • Author

    Weaver, B.D. ; Martin, P.A. ; Boos, J.B. ; Cress, C.D.

  • Author_Institution
    Naval Res. Lab. (NRL), Washington, DC, USA
  • Volume
    59
  • Issue
    6
  • fYear
    2012
  • Firstpage
    3077
  • Lastpage
    3080
  • Abstract
    We present the results of a radiation damage experiment on AlxGa1-xN/GaN high electron mobility transistors. The basic mechanism underlying the observed high radiation tolerance appears to be a strong internal piezoelectric field near the two-dimensional electron gas that causes scattered carriers to be reinjected.
  • Keywords
    high electron mobility transistors; radiation effects; AlGaN; GaN; displacement damage effects; high electron mobility transistors; high radiation tolerance; radiation damage experiment; strong internal piezoelectric ήeld; two-dimensional electron gas; Gallium nitride; HEMTs; Proton radiation effects; Displacement damage; gallium nitride; high electron mobility transistors; proton irradiation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2224371
  • Filename
    6365420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1341477