Title :
CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter
Author :
Rasras, Mahmoud S. ; Gill, Douglas M. ; Earnshaw, Mark P. ; Doerr, Christopher R. ; Weiner, Joseph S. ; Bolle, Cristian A. ; Chen, Young-kai
Author_Institution :
Alcatel-Lucent/Bell Labs., Murray Hill, NJ, USA
Abstract :
We demonstrate a complimentary metal-oxide-semiconductor (CMOS)-compatible and widely tunable filter with an integrated germanium detector. The filter uses two stages of sixth-order pole-zero filtering cascaded in a vernier fashion to achieve simultaneous tunability and adjustable passband bandwidth from 25 to 50 GHz tuned over a wavelength range >12 nm. The out-of-band crosstalk rejection is ~ 30 dB. The monolithically integrated detector has a bandwidth of 6 GHz. We also demonstrate a modified detector design which showed a bandwidth of 11 GHz/s and responsivity of 0.75 A/W.
Keywords :
CMOS integrated circuits; band-pass filters; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; optical design techniques; optical filters; optical receivers; photodetectors; silicon; wavelength division multiplexing; CMOS silicon receiver; Si-Ge; Vernier fashion; adjustable passband bandwidth; bandwidth 6 GHz; complimentary metal-oxide-semiconductor compatibility; filtering tunability; frequency 25 GHz to 50 GHz; integrated germanium detector; modified detector design; monolithically integrated detector; out-of-band crosstalk rejection; reconfigurable optical filter; sixth-order pole-zero filtering; Bandpass filter; high-index-contrast waveguide; optical communications; routing;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2036590
