Title :
Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure
Author :
Wan, H.W. ; Chong, T.C. ; Chua, S.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
It is shown that In/sub 1-x/Ga/sub x/As/In/sub 0.52/Al/sub 0.48/As MQW structures with the wells under tensile strain obtained by the appropriate selection of the Ga mole fraction and well size can achieve polarization-insensitive optical switching and modulation for a wide range of wavelengths between 1.0 and 1.6 mu m. For example, a change in refractive index of -0.5% at about 1.55 mu m will facilitate an intersectional angle of more than 10 degrees in a total internal reflection switch which can be readily fabricated. Hence, this material system is promising for long-wavelength polarization-insensitive semiconductor optoelectronic devices.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; optoelectronic devices; piezo-optical effects; refractive index; semiconductor quantum wells; 1.0 to 1.6 micron; Ga mole fraction; III-V semiconductors; In/sub 1-x/Ga/sub x/As-In/sub 0.52/Al/sub 0.48/As multiple quantum well structures; intersectional angle; long-wavelength polarization-insensitive semiconductor optoelectronic devices; modulation; polarization insensitive optical switching; refractive index; strained quantum well structure; tensile strain; total internal reflection switch; wavelengths; well size; Indium compounds; Indium gallium arsenide; Optical modulation; Optical polarization; Optical reflection; Optical refraction; Optical variables control; Quantum well devices; Refractive index; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
