Title :
A monolithically integrated In/sub 0.53/Ga/sub 0.47/As optical receiver with voltage-tunable transimpedance
Author :
Lo, D.C.W. ; Chung, Y.K. ; Forrest, S.R.
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The authors report the fabrication and performance of the first monolithically integrated In/sub 0.53/Ga/sub 0.47/As receiver with voltage-tunable transimpedance. In this receiver, a SiN/sub x/ passivated p-i-n diode is integrated with an In/sub 0.53/Ga/sub 0.47/As transimpedance amplifier using multiple-etched steps to assist lithography and step coverage of the interconnection metallization. The p-i-n diode has an external quantum efficiency of 82% at a wavelength of 1.3 mu m and -5 V bias. Adjusting the gate bias of a narrow-gate feedback transistor gives the receiver a tunable transimpedance of 19-36 Omega , a responsivity of 17-30 kV/W, and an unequalized bandwidth of 90-130 MHz.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; receivers; 1.3 micron; 82 percent; 90 to 130 MHz; III-V semiconductors; In/sub 0.53/Ga/sub 0.47/As transimpedance amplifier; SiN/sub x/; external quantum efficiency; fabrication; gate bias; interconnection metallization; lithography; monolithically integrated In/sub 0.53/Ga/sub 0.47/As optical receiver; multiple-etched steps; narrow-gate feedback transistor; passivated p-i-n diode; performance; responsivity; step coverage; unequalized bandwidth; voltage-tunable transimpedance; wavelength; Bandwidth; Indium gallium arsenide; Integrated circuit interconnections; Optical amplifiers; Optical fiber communication; Optical receivers; Output feedback; P-i-n diodes; Silicon compounds; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
