Title :
Modeling of rarefied gas heat conduction between wafer and susceptor
Author_Institution :
Central Res. Lab., Tokyo Electron. Ltd., Japan
fDate :
2/1/1998 12:00:00 AM
Abstract :
Gas-assisted wafer cooling/heating system is one of the key technologies for manufacturing microelectronic devices. The heat conduction in the gap between wafer and susceptor is modeled here as a one- or two dimensional (1-D or 2-D) rarefied gas problem. The simulation is performed for monatomic and diatomic gases by means of the Direct Simulation Monte Carlo (DSMC) method. In the 1-D case the gas heat conductivity is obtained for various factors (gas species, surface temperature, energy accommodation coefficient) as a function of the Knudsen number. All numerical data obtained can be summarized by a simple equation: Smoluchowski´s equation extended to the free molecular regime. In the 2-D case, the DSMC method is applied to the heat transfer between rough and smooth surfaces. The effect of surface roughness on heat conduction is clarified
Keywords :
Monte Carlo methods; heat conduction; rarefied fluid dynamics; semiconductor process modelling; DSMC model; Direct Simulation Monte Carlo method; Knudsen number; Smoluchowski equation; diatomic gas; energy accommodation coefficient; free molecular flow; microelectronic device manufacture; monatomic gas; one-dimensional simulation; rarefied gas heat conduction; surface roughness; surface temperature; susceptor; two-dimensional simulation; wafer cooling; wafer heating; Cooling; Equations; Gases; Heating; Manufacturing; Microelectronics; Rough surfaces; Semiconductor device modeling; Surface roughness; Two dimensional displays;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on