Title :
Temperature-dependent emissivity of silicon-related materials and structures
Author :
Ravindra, Nuggehalli M. ; Abedrabbo, Sufian ; Chen, Wei ; Tong, Feiming M. ; Nanda, Arun K. ; Speranza, Anthony C.
Author_Institution :
Dept. of Phys., New Jersey Inst. of Technol., Newark, NJ, USA
fDate :
2/1/1998 12:00:00 AM
Abstract :
The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study
Keywords :
Fourier transform spectroscopy; elemental semiconductors; emissivity; high-temperature techniques; infrared spectroscopy; rapid thermal processing; refractive index; silicon; spectral methods of temperature measurement; 300 to 2000 K; Fourier Transform Infra-Red spectrometer; Si; Si3N4; noncontact real-time optical technique; radiative properties; refractive index; silicon nitride; silicon-related materials; simultaneous measurement; spectral emissometer; surface spectral emittance; surface temperature; temperature-dependent emissivity; wavelength dependent emissivity; Collaboration; Fourier transforms; Infrared spectra; Optical design; Optical materials; Optical surface waves; Spectroscopy; Surface waves; Temperature distribution; Wavelength measurement;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
