0.35 µm AMS silicon MOSFET for continous-wave (CW) sub-THz detection in room temperature

Author

Othman, M.A. ; Harrison, I.

Author_Institution

Centre for Telecommun. Res. & Innovation (CeTRI), Univ. Teknikal Malaysia Melaka (UTeM), Durian Tunggal, Malaysia

fYear

2014

fDate

27-29 May 2014

Firstpage

471

Lastpage

474

Abstract

In this paper we report the detection of sub-THz radiation at 220 GHz by using 0.35 μm Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The observation of photoresponse are measured against gate voltage with a drain current effect at room temperature. The measured photoresponse is a superposition of a generally increasing response with a decrease in VGS coupled with a small peak approximately at threshold and there is an evidence that the MOSFET can be a sensitive sub-THz detector in the room temperature.

Keywords

MOSFET; elemental semiconductors; silicon; terahertz wave detectors; AMS silicon MOSFET; Si; continous-wave sub-THz detection; drain current effect; frequency 220 GHz; gate voltage; metal oxide semiconductor field effect transistor; photoresponse; size 0.35 mum; sub-THz detector; sub-THz radiation; Current measurement; Detectors; Logic gates; MOSFET; Plasma waves; Radio frequency; 0.35 µm process; MOSFET; photoresponse; sub-THz;

fLanguage

English

Publisher

ieee

Conference_Titel

Technology Management and Emerging Technologies (ISTMET), 2014 International Symposium on

Conference_Location

Bandung

Print_ISBN

978-1-4799-3703-5

Type

conf

DOI

10.1109/ISTMET.2014.6936556

Filename

6936556