Surface emitting InGaAsP/InP distributed feedback laser diode at 1.53 mu m with monolithic integrated microlens

Author

Stegmüller, B. ; Westermeier, H. ; Thulke, W. ; Franz, G. ; Sacher, D.

Author_Institution

Siemens AG, Munich, Germany

Volume

3

Issue

9

fYear

1991

Firstpage

776

Lastpage

778

Abstract

Monolithic integration of a distributed feedback (DFB) surface-emitting laser diode with a microlens is demonstrated. The transverse and longitudinal cross-sectional views of the laser diode are illustrated. The microlens and a DFB laser structure are located on opposite sides of an n-InP substrate. 11 mA minimum continuous wave (CW) threshold current and 5 mW CW emission perpendicular to the InP substrate are achieved at room temperature using a chemically etched 45 degrees mirror. Single mode emission at 1.53 mu m is obtained. The integrated microlens, etched by ion beam and coated with aluminum oxide, provides optical beam collimation and an ultralow laser mode reflectivity of <10/sup -4/.<>

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; laser transitions; lenses; semiconductor junction lasers; 1.53 micron; Al/sub 2/O/sub 3/; CW emission; CW threshold current; DFB surface emitting LD; III-V semiconductor; InGaAsP-InP; InP; chemically etched 45 degrees mirror; distributed feedback laser diode; ion beam etching; longitudinal cross-sectional views; microlens; monolithic integrated microlens; n-InP substrate; optical beam collimation; room temperature; single mode emission; transverse cross sectional views; ultralow laser mode reflectivity; Chemical lasers; Diode lasers; Distributed feedback devices; Etching; Indium phosphide; Laser modes; Lenses; Microoptics; Optical surface waves; Surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.84489

Filename

84489