DocumentCode :
1341672
Title :
Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS Devices
Author :
Jannaty, Pooya ; Sabou, Florian C. ; Gadlage, Matthew ; Bahar, R. Iris ; Mundy, Joseph ; Patterson, William ; Reed, Robert A. ; Weller, Robert A. ; Schrimpf, Ronald D. ; Zaslavsky, Alexander
Author_Institution :
Dept. of Phys., Brown Univ., Providence, RI, USA
Volume :
57
Issue :
6
fYear :
2010
Firstpage :
3768
Lastpage :
3774
Abstract :
Radiation-induced soft errors have been a reliability concern for logic integrated circuits since their emergence. Feature-size and supply-voltage reduction require the analysis of soft-error sensitivity as a function of technology scaling. In this paper, an analytical framework based on Markov chains and queue theory is presented for computation of alpha-particle-induced soft-error rates of a flip-flop operated in the subthreshold regime. The proposed framework is capable of reflecting the technology parameters such as supply voltage Vdd, channel length, process-induced threshold variation, and operating temperature. As an example, the framework is used to investigate the mean time to error of flip-flops built in a 32 nm fully-depleted silicon-on-insulator technology operating in the subthreshold regime subject to two limiting fluxes of alpha particle radiation: high at 100 (α/h.cm2) and ultra-low alpha (ULA) emission 0.002 (α/h.cm2).
Keywords :
CMOS integrated circuits; Markov processes; logic circuits; nanoelectronics; queueing theory; radiation effects; silicon-on-insulator; alpha particle radiation; alpha-particle-induced soft-error rates; channel length; feature-size reduction; logic integrated circuits; operating temperature; process-induced threshold variation; queue theory; radiation-induced soft errors; silicon-on-insulator technology; subthreshold nanoscale CMOS devices; subthreshold regime; supply voltage; supply-voltage reduction; technology parameters; technology scaling; two-dimensional Markov chain analysis; Alpha particles; CMOS integrated circuits; Error analysis; Logic devices; Markov processes; Radiation effects; SRAM chips; Single event upset; Alpha-particle radiation effects; CMOS devices; SRAMs; logic devices; radiation effects in devices; reliability; single event upset; soft errors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2068561
Filename :
5593907
Link To Document :
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