DocumentCode :
1341681
Title :
PYRAMID-a hierarchical, rule-based approach toward proximity effect correction. I. Exposure estimation
Author :
Lee, Soo-Young ; Cook, Brian D.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Volume :
11
Issue :
1
fYear :
1998
fDate :
2/1/1998 12:00:00 AM
Firstpage :
108
Lastpage :
116
Abstract :
One of the major limiting factors in electron beam (e-beam) lithography is the undesired development of circuit area caused by electron scattering (the proximity effect). Since the proximity effect imposes a severe limitation on the ultimate resolution attainable with electron beam lithography, it is important to examine ways in which the proximity effect can be reduced. In order to develop a fast and efficient proximity effect correction scheme it is necessary to have a fast and accurate technique for finding the exposure (energy) deposited at any given point in the circuit pattern. In this paper we present the hierarchical digital signal processing (DSP) model utilized by PYRAMID (our proximity effect correction scheme) to estimate these exposures. Our approach employs a two part hierarchical estimation technique which is several orders of magnitude faster than a direct (spatial domain or FFT-based) convolution yet is able to predict the result of an exposure with a high degree of accuracy. A detailed description of our method of exposure estimation is followed by a thorough analysts of its performance through simulation and experimental results
Keywords :
electron beam lithography; electronic engineering computing; proximity effect (lithography); semiconductor process modelling; PYRAMID; digital signal processing model; e-beam lithography; electron beam lithography; electron scattering; exposure estimation; hierarchical DSP model; hierarchical rule-based method; proximity effect correction scheme; two part hierarchical estimation technique; undesired circuit area development; Circuits; Convolution; Digital signal processing; Electron beams; Energy resolution; Limiting; Lithography; Performance analysis; Proximity effect; Scattering;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.661290
Filename :
661290
Link To Document :
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