• DocumentCode
    1341681
  • Title

    PYRAMID-a hierarchical, rule-based approach toward proximity effect correction. I. Exposure estimation

  • Author

    Lee, Soo-Young ; Cook, Brian D.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    11
  • Issue
    1
  • fYear
    1998
  • fDate
    2/1/1998 12:00:00 AM
  • Firstpage
    108
  • Lastpage
    116
  • Abstract
    One of the major limiting factors in electron beam (e-beam) lithography is the undesired development of circuit area caused by electron scattering (the proximity effect). Since the proximity effect imposes a severe limitation on the ultimate resolution attainable with electron beam lithography, it is important to examine ways in which the proximity effect can be reduced. In order to develop a fast and efficient proximity effect correction scheme it is necessary to have a fast and accurate technique for finding the exposure (energy) deposited at any given point in the circuit pattern. In this paper we present the hierarchical digital signal processing (DSP) model utilized by PYRAMID (our proximity effect correction scheme) to estimate these exposures. Our approach employs a two part hierarchical estimation technique which is several orders of magnitude faster than a direct (spatial domain or FFT-based) convolution yet is able to predict the result of an exposure with a high degree of accuracy. A detailed description of our method of exposure estimation is followed by a thorough analysts of its performance through simulation and experimental results
  • Keywords
    electron beam lithography; electronic engineering computing; proximity effect (lithography); semiconductor process modelling; PYRAMID; digital signal processing model; e-beam lithography; electron beam lithography; electron scattering; exposure estimation; hierarchical DSP model; hierarchical rule-based method; proximity effect correction scheme; two part hierarchical estimation technique; undesired circuit area development; Circuits; Convolution; Digital signal processing; Electron beams; Energy resolution; Limiting; Lithography; Performance analysis; Proximity effect; Scattering;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.661290
  • Filename
    661290