Title :
A DC method for measuring all the gate capacitors in MOS devices with atto-farad resolution
Author :
Manku, Tajinder ; MacEachern, Leonard
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
2/1/1998 12:00:00 AM
Abstract :
In this paper we present a new methodology for measuring all the intrinsic gate capacitors (i.e., gate-source, gate-drain, and gate-bulk) in a MOS device using a DC measurement scheme. The structure consists of two matched MOSFET´s, one of which has a reference capacitor attached to its gate. The test structure was fabricated and the results show a resolution in the atto-farads range. The test structures use charge coupling to measure the gate capacitors
Keywords :
CMOS integrated circuits; MOS capacitors; MOSFET; capacitance measurement; integrated circuit measurement; integrated circuit testing; DC measurement scheme; MOS devices; atto-farad resolution; charge coupling; gate-bulk type; gate-drain type; gate-source type; intrinsic gate capacitors; matched MOSFETs; reference capacitor; Calibration; Capacitance measurement; Charge measurement; Current measurement; Frequency; MOS capacitors; MOS devices; MOSFET circuits; Semiconductor device measurement; Testing;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
