Title :
Silicon raised strip waveguides based on silicon and silicon dioxide thermal bonding
Author :
Zhao, C.Z. ; Liu, E.K. ; Li, G.Z. ; Li, N. ; Guo, L.
Author_Institution :
Microelectron. Inst., Xidian Univ., Xi´an, China
fDate :
4/1/1997 12:00:00 AM
Abstract :
Si raised strip waveguides on SiO2 have been proposed and fabricated, which are based on silicon-on-insulator (SOI) material. In the waveguides, the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. An anisotropic etchant is used to produce the trapezoidal Si raised strip waveguides by etching the Si film down to the SiO2 etch-stop buried layer. The transmission losses of the Si waveguides are measured to be less than 0.2 dB/cm at the 1.3 μm wavelength for the lowest mode TE-like mode.
Keywords :
elemental semiconductors; etching; integrated optics; integrated optoelectronics; optical fabrication; optical losses; optical waveguides; polishing; silicon; silicon compounds; silicon-on-insulator; wafer bonding; 0.2 dB; 1.3 mum; SOI material; Si raised strip waveguides; Si-SiO/sub 2/; SiO/sub 2/; SiO/sub 2/ etch-stop buried layer; anisotropic etchant; back-polishing; etching; lowest mode TE-like mode; silicon-on-insulator; thermal bonding; transmission losses; trapezoidal Si raised strip waveguides; Anisotropic magnetoresistance; Bonding; Etching; Loss measurement; Propagation losses; Semiconductor films; Silicon compounds; Silicon on insulator technology; Strips; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
