Silicon raised strip waveguides based on silicon and silicon dioxide thermal bonding

Author

Zhao, C.Z. ; Liu, E.K. ; Li, G.Z. ; Li, N. ; Guo, L.

Author_Institution

Microelectron. Inst., Xidian Univ., Xi´an, China

Volume

9

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

473

Lastpage

474

Abstract

Si raised strip waveguides on SiO₂ have been proposed and fabricated, which are based on silicon-on-insulator (SOI) material. In the waveguides, the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. An anisotropic etchant is used to produce the trapezoidal Si raised strip waveguides by etching the Si film down to the SiO₂ etch-stop buried layer. The transmission losses of the Si waveguides are measured to be less than 0.2 dB/cm at the 1.3 μm wavelength for the lowest mode TE-like mode.

Keywords

elemental semiconductors; etching; integrated optics; integrated optoelectronics; optical fabrication; optical losses; optical waveguides; polishing; silicon; silicon compounds; silicon-on-insulator; wafer bonding; 0.2 dB; 1.3 mum; SOI material; Si raised strip waveguides; Si-SiO/sub 2/; SiO/sub 2/; SiO/sub 2/ etch-stop buried layer; anisotropic etchant; back-polishing; etching; lowest mode TE-like mode; silicon-on-insulator; thermal bonding; transmission losses; trapezoidal Si raised strip waveguides; Anisotropic magnetoresistance; Bonding; Etching; Loss measurement; Propagation losses; Semiconductor films; Silicon compounds; Silicon on insulator technology; Strips; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.559392

Filename

559392