DocumentCode :
1341891
Title :
Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity
Author :
Huffaker, D.L. ; Graham, L.A. ; Deppe, Dennis G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Volume :
33
Issue :
14
fYear :
1997
fDate :
7/3/1997 12:00:00 AM
Firstpage :
1225
Lastpage :
1226
Abstract :
Data are presented on vertical cavity surface emitting lasers that use an InGaAlAs quantum dot active region and oxide-confinement. Continuous-wave room temperature operation is achieved at a wavelength of 9510 Å with a threshold current of 235 μA for a 7 μm square oxide aperture. Electroluminescence from similar active regions without a cavity shows that lasing occurs on the three-dimensionally confined quantum dot electronic states
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 235 muA; 7 micron; 9510 A; InGaAlAs; InGaAlAs quantum dot active region; half-wave cavity; low-threshold CW operation; oxide-confined VCSEL; room temperature operation; semiconductor laser; surface emitting laser; vertical cavity SEL;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970825
Filename :
603585
Link To Document :
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