DocumentCode :
1341905
Title :
Exploiting the Body of MOS Devices for High Performance Analog Design
Author :
Monsurrò, Pietro ; Pennisi, Salvatore ; Scotti, Giuseppe ; Trifiletti, Alessandro
Author_Institution :
DIE (Dipt. di Ing. Elettron.), Univ. of Rome Sapienza, Rome, Italy
Volume :
11
Issue :
4
fYear :
2011
Firstpage :
8
Lastpage :
23
Abstract :
With the progressive reduction of MOS transistors minimum dimension and their associated supply voltages, the body terminal-considered in the past as an exclusive source of unwanted second order effects-has been advantageously exploited by digital designers and is also becoming an attractive opportunity for the implementation of high-performance analog integrated circuits. In this paper, we will discuss some techniques that can be applied to many conventional analog building blocks in order to improve their performance (such as gain and linearity) and/or decreasing their supply demand. Experimental prototypes have been implemented and tested, showing that the proposed techniques are promising candidates for enhanced analog IC design in nanoscale technologies.
Keywords :
MOSFET; analogue integrated circuits; integrated circuit design; nanoelectronics; MOS devices; MOS transistors; body terminal; enhanced analog IC design; high-performance analog integrated circuit design; minimum dimension reduction; nanoscale technology; second order effects; CMOS integrated circuits; Capacitors; Logic gates; MOS devices; Threshold voltage; Transistors;
fLanguage :
English
Journal_Title :
Circuits and Systems Magazine, IEEE
Publisher :
ieee
ISSN :
1531-636X
Type :
jour
DOI :
10.1109/MCAS.2011.942751
Filename :
6035851
Link To Document :
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