DocumentCode :
1341958
Title :
Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror
Author :
Almuneau, G. ; Genty, F. ; Chusseau, L. ; Bertru, N. ; Fraisse, B. ; Jacquet, J.
Author_Institution :
Centre d´´Electron. et de Microelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Volume :
33
Issue :
14
fYear :
1997
fDate :
7/3/1997 12:00:00 AM
Firstpage :
1227
Lastpage :
1228
Abstract :
The first high reflectivity (R=97.7%) Al0.3Ga0.7 As0.5Sb0.5/AlAs0.59Sb0.41 Bragg mirror lattice matched to InP was obtained at 1.28 μm by solid source molecular beam epitaxy. This result was achieved with only 15.5 periods in the stack. A comparison between the calculated and the measured Bragg mirror reflectivities shows a near perfect agreement
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser mirrors; molecular beam epitaxial growth; optical fabrication; reflectivity; 1.3 micron; Al0.3Ga0.7As0.5Sb0.5 -AlAs0.59Sb0.41; InP; InP substrate; high-reflectivity AlGaAsSb/AlAsSb Bragg mirror; lattice matched layer; solid source molecular beam epitaxy growth;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970830
Filename :
603586
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1341958
بازگشت