Title :
Dilute nitride vertical-cavity gate for all-optical logic at 1.3 μm
Author :
de Valicourt, G. ; Porzi, Claudio ; Guina, M. ; Balkan, N.
Author_Institution :
Dept. of Comput. Sci. & Electron. Eng., Univ. of Essex, Colchester, UK
fDate :
10/1/2010 12:00:00 AM
Abstract :
The authors report on the design and performance of an all-optical vertical-cavity semi-conductor gate (VCSG) based on dilute nitride (GaInNAs/GaAs) quantum wells, proposed for performing AND/OR or NAND/NOR logic functions. In particular, the authors analyse the effect of non-linear refractive index variation on the overall non-linear characteristic of the device. Compared to typical InP-based non-linear gates GaAs-based devices incorporating dilute nitride active regions are a step forward towards reducing the fabrication complexity and relaxing the design constrains by employing high-quality GaAs/AlAs distributed Bragg reflectors. The authors develop a predictive model of VCSG relying on numerical simulation. Trade-off between the operation bandwidth and the modulation depth is found out associated to a variation of the refractive index for different optical injection conditions.
Keywords :
III-V semiconductors; distributed Bragg reflectors; gallium arsenide; gallium compounds; indium compounds; logic gates; optical design techniques; optical logic; optical modulation; optical resonators; refractive index; semiconductor quantum wells; AND-OR logic function; GaAs-AlAs; GaInNAs-GaAs; NAND-NOR logic function; dilute nitride quantum wells; distributed Bragg reflectors; modulation depth; nonlinear refractive index; optical design; optical logic; vertical-cavity semiconductor gate; wavelength 1.3 mum;
Journal_Title :
Optoelectronics, IET
DOI :
10.1049/iet-opt.2009.0078
