• DocumentCode
    1342092
  • Title

    Piezoelectric charge densities in AlGaN/GaN HFETs

  • Author

    Asbeck, P.M. ; Yu, E.T. ; Lau, S.S. ; Sullivan, G.J. ; Van Hove, J. ; Redwing, J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA
  • Volume
    33
  • Issue
    14
  • fYear
    1997
  • fDate
    7/3/1997 12:00:00 AM
  • Firstpage
    1230
  • Lastpage
    1231
  • Abstract
    New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ~5×1013 cm-2 xAl (where xAl is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; piezoelectricity; power field effect transistors; Al2O3; AlGaN-GaN; AlGaN/GaN HFETs; III-V nitride HFETs; SiC; SiC substrates; electron densities; heterostructure FET; piezoelectric charge density; piezoelectric effects; sapphire substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970843
  • Filename
    603588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342092