Title :
Piezoelectric charge densities in AlGaN/GaN HFETs
Author :
Asbeck, P.M. ; Yu, E.T. ; Lau, S.S. ; Sullivan, G.J. ; Van Hove, J. ; Redwing, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA
fDate :
7/3/1997 12:00:00 AM
Abstract :
New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ~5×1013 cm-2 xAl (where xAl is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; piezoelectricity; power field effect transistors; Al2O3; AlGaN-GaN; AlGaN/GaN HFETs; III-V nitride HFETs; SiC; SiC substrates; electron densities; heterostructure FET; piezoelectric charge density; piezoelectric effects; sapphire substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970843
