Highly efficient 40 GHz waveguide InGaAs p-i-n photodiode employing multimode waveguide structure

Author

Kato, Kazutoshi ; Hata, Susumu ; Kozen, Atsuo ; Yoshida, Jun-ichi ; Kawano, Kenji

Author_Institution

NTT Opto-Electron. Lab., Kanagawa, Japan

Volume

3

Issue

9

fYear

1991

Firstpage

820

Lastpage

822

Abstract

The authors describe the design procedure of a highly efficient waveguide p-i-n photodiode. The efficiency of the waveguide InP/InGaAsP ( lambda /sub g/=1.3 mu m)/InGaAs/InGaAsP ( lambda /sub g/=1.3 mu m)/InP p-i-n photodiode is calculated using the step-segment method and overlap-integral between the optical field of a fiber and that of the photodiode. A remarkably high coupling efficiency to a fiber can be obtained by using a multimode waveguide structure. The fabricated device has an external quantum efficiency of 68% as well as 3 dB bandwidth of higher than 40 GHz at a 1.55 mu m wavelength.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical waveguides; p-i-n diodes; photodiodes; 1.3 micron; 1.55 micron; 40 GHz; 68 percent; InGaAs; InP-InGaAsP-InGaAs-InGaAsP-InP; external quantum efficiency; fibre coupling; high coupling efficiency; multimode waveguide structure; optical field; overlap-integral; step-segment method; waveguide p-i-n photodiode; Absorption; Bandwidth; Indium gallium arsenide; Indium phosphide; Optical devices; Optical fiber devices; Optical surface waves; Optical waveguides; PIN photodiodes; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.84505

Filename

84505