Title :
Waveguide-integrated InP-InGaAs-InAlGaAs MSM photodetector with very-high vertical-coupling efficiency
Author :
Kollakowski, S. ; Bottcher, E.H. ; Lemm, C. ; Strittmatter, A. ; Bimberg, D. ; Krautle, H.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
fDate :
4/1/1997 12:00:00 AM
Abstract :
We report on a novel implementation of long-wavelength vertically-coupled waveguide-integrated metal-semiconductor-metal (MSM) InGaAs photodetectors which results in a significantly improved guide-to-absorber coupling efficiency. By employing an In/sub 0.53/Al/sub 0.31/Ga/sub 0.16/As buried strip waveguide embedded in InP, a coupling length of only 20 μm is sufficient to obtain an internal quantum efficiency greater than 95%. Moreover, the photoresponse is found to be virtually independent of the polarization state of light coupled into the input waveguide. The device parameters agree with the results of eigenmode calculations.
Keywords :
aluminium compounds; eigenvalues and eigenfunctions; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; integrated optics; light absorption; metal-semiconductor-metal structures; optical communication equipment; optical couplers; optical waveguides; 20 mum; 95 percent; In/sub 0.53/Al/sub 0.31/Ga/sub 0.16/As; In/sub 0.53/Al/sub 0.31/Ga/sub 0.16/As buried strip waveguide; InP; InP-InGaAs-InAlGaAs MSM photodetector; coupling length; device parameters; eigenmode calculations; guide-to-absorber coupling efficiency; input waveguide; internal quantum efficiency; long-wavelength vertically-coupled waveguide-integrated MSM InGaAs photodetectors; photoresponse; polarization state; very-high vertical-coupling efficiency; waveguide-integrated; Absorption; Bandwidth; Detectors; Impedance matching; Indium gallium arsenide; Indium phosphide; Optical waveguides; PIN photodiodes; Photodetectors; Semiconductor waveguides;
Journal_Title :
Photonics Technology Letters, IEEE
