Title :
A Statistical Approach to Microdose Induced Degradation in FinFET Devices
Author :
Griffoni, Alessio ; Gerardin, Simone ; Roussel, Philippe J. ; Degraeve, Robin ; Meneghesso, Gaudenzio ; Paccagnella, Alessandro ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We model the effects through a statistical analysis, which considers the three-dimensional nature of these devices and overlapping ion hits. The analysis carried out in this work is based on a large amount of experimental data and on the reliability distribution functions (Poisson area scaling, LogNormal distribution, Weibull distribution, etc.), commonly used to estimate the time and charge to breakdown for accelerated lifetime tests.
Keywords :
MOSFET; Weibull distribution; ion beam effects; normal distribution; semiconductor device reliability; statistical analysis; FinFET Devices; Weibull distribution; heavy-ion strikes; log-normal distribution; microdose induced degradation; reliability distribution functions; statistical analysis; CMOS process; Degradation; Electric breakdown; FinFETs; Life estimation; Lifetime estimation; Radiation effects; Single event upset; Statistical analysis; Weibull distribution; FinFET; Weibull distribution; heavy-ion irradiation; microdose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2033365
