DocumentCode :
1342282
Title :
Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 
on a Flexible Substrate
Author :
Lee, Dong Hee ; Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo
Author_Institution :
Mater. & Struct. Lab., Tokyo Inst. of Technol., Yokohama, Japan
Volume :
32
Issue :
12
fYear :
2011
Firstpage :
1695
Lastpage :
1697
Abstract :
Diffusion-limited Schottky junctions were fabricated at 200°C by employing a top amorphous In-Ga-Zn-O (a-IGZO)/bottom Pt electrode structure. Those fabricated on glass exhibited rectification ratios of Ion/off >; 108 and ideality factors close to unity n = 1.04. The temperature dependence values of current-voltage characteristics were small and not explained by a simple thermionic emission theory; instead, a percolation model explains them with an average Schottky barrier height of 1.2 eV and its distribution width of 0.13 eV. Flexible a-IGZO/Pt Schottky junctions were also demonstrated on polyimide substrates with n = 1.2 and Ion/off >; 105.
Keywords :
Schottky barriers; amorphous semiconductors; flexible electronics; gallium compounds; indium compounds; platinum; semiconductor-metal boundaries; ternary semiconductors; InGaZnO-Pt; Schottky barrier; a-IGZO; amorphous oxide semiconductor; current-voltage characteristic; diffusion limited Schottky junction; flexible substrate; top amorphous electrode structure; Annealing; Electrodes; Resistance; Schottky barriers; Schottky diodes; Substrates; Amorphous indium–gallium–zinc–oxide (a-IGZO); Schottky diode; amorphous oxide semiconductor (AOS); flexible device;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2167123
Filename :
6035956
Link To Document :
