Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets

Author

Francis, A. Matt ; Dimitrov, Dimitrie ; Kauppila, Jeff ; Sternberg, Andrew ; Alles, Michael ; Holmes, James ; Mantooth, H.A.

Author_Institution

Lynguent, Inc., Fayetteville, AR, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3109

Lastpage

3114

Abstract

When evaluating sub-100 nm circuits for hardness to Single Event Transients (SETs), the choice of strike model is shown to have a notable effect upon observed upsets. A method utilizing distributed charges to model strikes to adjacent devices is illustrated and utilized to compare the effect of strike kernel models in such Charge Sharing SETS (CSSETS). Bias-dependent models are shown to more accurately predict expected physical observations and Technology Computer Aided Design (TCAD) simulation, especially when such charge-sharing upsets must be considered.

Keywords

SPICE; integrated circuit design; radiation hardening (electronics); technology CAD (electronics); CSSETS; IC design; SPICE simulation; TCAD simulation; Technology Computer Aided Design simulation; charge sharing SETS; circuit-level prediction; single event transient hardness; strike kernel model; Circuit simulation; Computational modeling; Computer simulation; Context modeling; Integrated circuit modeling; Kernel; Physics computing; Predictive models; Radiation hardening; SPICE; Charge sharing; radiation hardening by design (RHBD); radiation hardness assurance methodology; single event effects; single event transients (SETs);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2032912

Filename

5341349