DocumentCode :
1342318
Title :
Parallelization of a Monte Carlo ion implantation simulator
Author :
Hössinger, Andreas ; Langer, Erasmus ; Selberherr, Siegfried
Author_Institution :
Inst. fur Mikroelektron., Tech. Univ. Wien, Austria
Volume :
19
Issue :
5
fYear :
2000
fDate :
5/1/2000 12:00:00 AM
Firstpage :
560
Lastpage :
567
Abstract :
We present a parallelization method based on message passing interface (MPI) for a Monte Carlo program for two-dimensional (2-D) and three-dimensional (3-D) simulation of ion implantations. We use a master-slave strategy where the master process synchronizes the slaves and performs the input-output operations, while the slaves perform the physical simulation. For this method the simulation domain is geometrically distributed among several CPU´s which have to exchange only very little information during the simulation. Thereby, the communication overhead between the CPU´s is kept so low that it has almost no influence on the performance gain even if a standard network of workstations is used instead of a massively parallel computer to perform the simulation. We have optimized the performance gain by identifying bottlenecks of this strategy when it is applied to arbitrary geometries consisting of various materials. This requires the application of different physical models within the simulation domain and makes it impossible to determine a reasonable domain distribution before starting the simulation. Due to a feedback between master and slaves by online performance measurements, we obtain an almost linear performance gain on a cluster of workstations with just slightly varying processor loads. Besides the increase in performance, the parallelization method also achieves a distribution of the required memory. This allows 3-D simulations on a cluster of workstations, where each single machines would not have enough memory to perform the simulation on its own
Keywords :
Monte Carlo methods; digital simulation; electronic engineering computing; ion implantation; message passing; parallel processing; semiconductor process modelling; workstation clusters; 2D simulation; 3D simulation; Monte Carlo program; Monte Carlo simulator; ion implantation simulator; master-slave strategy; message passing interface; parallelization method; workstation cluster; Communication standards; Computational modeling; Ion implantation; Master-slave; Message passing; Monte Carlo methods; Performance gain; Solid modeling; Two dimensional displays; Workstations;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.845080
Filename :
845080
Link To Document :
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