DocumentCode
1342367
Title
Investigation of high-temperature degradation of platinum thin films with an in situ resistance measurement apparatus
Author
Firebaugh, Samara L. ; Jensen, Klavs F. ; Schmidt, Martin A.
Author_Institution
MIT, Cambridge, MA, USA
Volume
7
Issue
1
fYear
1998
fDate
3/1/1998 12:00:00 AM
Firstpage
128
Lastpage
135
Abstract
Many microfabricated systems require metallizations that can withstand high temperatures. In particular, a microfabricated chemical reactor system which we are investigating needs thin metal films for heating and temperature sensing that can withstand prolonged 1000°C exposure. The current microreactor metallization, a 100-nm platinum film with a 10-nm titanium adhesion layer, degrades at temperatures greater than 700°C. This degradation was examined with a custom-built high-temperature resistance measurement apparatus in addition to chemical analysis, scanning electron microscopy (SEM), atomic-force microscopy (AFM) and wafer curvature measurements. Thicker films and coating layers increased the lifetime of these films while exposure to oxygen decreased lifetime, consistent with the hypothesized degradation mechanism of agglomeration
Keywords
atomic force microscopy; chemical analysis; curvature measurement; electric resistance measurement; micromechanical devices; platinum; scanning electron microscopy; semiconductor device metallisation; semiconductor device reliability; temperature sensors; 100 nm; 700 to 1000 degC; Pt; agglomeration; atomic-force microscopy; chemical analysis; coating layers; high-temperature degradation; microfabricated chemical reactor system; microreactor metallization; resistance measurement apparatus; scanning electron microscopy; temperature sensing; wafer curvature measurements; Atomic force microscopy; Atomic measurements; Chemical reactors; Degradation; Electrical resistance measurement; Heating; Metallization; Platinum; Scanning electron microscopy; Temperature sensors;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/84.661395
Filename
661395
Link To Document