Title :
Wide-range tunable semiconductor lasers using asymmetric dual quantum wells
Author :
Bor-Lin Lee ; Ching-Fuh Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
3/1/1998 12:00:00 AM
Abstract :
Using asymmetric dual quantum wells for the laser material, the semiconductor lasers are broadly tunable. In a grating coupled ring cavity, the semiconductor laser is continuously tunable from 766 to 856 nm using a 400-μm semiconductor laser amplifier in the cavity. This letter also demonstrates that the grating coupled ring cavity could well eliminate the amplified stimulated emission noise and about 40-dB amplified spontaneous emission (ASE) suppression ratio is obtained over the entire tuning range.
Keywords :
infrared sources; laser cavity resonators; laser noise; laser transitions; laser tuning; quantum well lasers; ring lasers; superradiance; symmetry; 400 mum; 766 to 856 nm; amplified spontaneous emission suppression ratio; amplified stimulated emission noise; asymmetric dual quantum well lasers; broadly tunable; continuously tunable; grating coupled ring cavit; grating coupled ring cavity; laser material; semiconductor laser amplifier; tuning range; wide-range tunable semiconductor lasers; Gratings; Laser noise; Laser tuning; Optical coupling; Optical materials; Quantum well lasers; Ring lasers; Semiconductor lasers; Semiconductor materials; Tunable circuits and devices;
Journal_Title :
Photonics Technology Letters, IEEE
