Wide-range tunable semiconductor lasers using asymmetric dual quantum wells

Author

Bor-Lin Lee ; Ching-Fuh Lin

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

10

Issue

3

fYear

1998

fDate

3/1/1998 12:00:00 AM

Firstpage

322

Lastpage

324

Abstract

Using asymmetric dual quantum wells for the laser material, the semiconductor lasers are broadly tunable. In a grating coupled ring cavity, the semiconductor laser is continuously tunable from 766 to 856 nm using a 400-μm semiconductor laser amplifier in the cavity. This letter also demonstrates that the grating coupled ring cavity could well eliminate the amplified stimulated emission noise and about 40-dB amplified spontaneous emission (ASE) suppression ratio is obtained over the entire tuning range.

Keywords

infrared sources; laser cavity resonators; laser noise; laser transitions; laser tuning; quantum well lasers; ring lasers; superradiance; symmetry; 400 mum; 766 to 856 nm; amplified spontaneous emission suppression ratio; amplified stimulated emission noise; asymmetric dual quantum well lasers; broadly tunable; continuously tunable; grating coupled ring cavit; grating coupled ring cavity; laser material; semiconductor laser amplifier; tuning range; wide-range tunable semiconductor lasers; Gratings; Laser noise; Laser tuning; Optical coupling; Optical materials; Quantum well lasers; Ring lasers; Semiconductor lasers; Semiconductor materials; Tunable circuits and devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.661397

Filename

661397