Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor

Gate-all-around MOSFETs were fabricated from single-crystal silicon nanowires as small as 500 A¿ across. The response to x-rays was measured for transistors with various gate oxide thicknesses, a variety of physical designs, and several different electric fields during irradiation. While the devices are otherwise very well behaved, the total dose degradation is larger than expected and is attributable to thicker, non-uniform gate oxide grown on non-(100) Si surfaces of the nanowires.