Title :
Modeling the Dose Rate Response and the Effects of Hydrogen in Bipolar Technologies
Author :
Chen, X. Jie ; Barnaby, Hugh J. ; Adell, Philippe ; Pease, Ronald L. ; Vermeire, Bert ; Holbert, Keith E.
Author_Institution :
Radiat. Monitoring Devices, Watertown, MA, USA
Abstract :
A physical model describing the dose rate response and the effect of hydrogen in bipolar technologies is presented. The model uses electron-hole pair recombination and competing hydrogen reactions to explain the behaviors of bipolar devices and circuits at different dose rates. Dose-rate-dependent computer simulations based on the model were performed, and the results provide excellent qualitative agreement with the dose rate data taken on both gated lateral pnp bipolar test transistors and LM193 bipolar dual-voltage comparators. The model presented in this paper can be used to explain a variety of factors that can influence device dose rate response in bipolar technologies.
Keywords :
bipolar transistors; comparators (circuits); electron-hole recombination; elemental semiconductors; hydrogen; radiation effects; semiconductor device models; silicon; silicon compounds; (Si-SiO2):H; LM193 bipolar dual-voltage comparators; bipolar circuits; device modeling; dose-rate-dependent computer simulations; electron-hole pair recombination; gated lateral pnp bipolar test transistors; hydrogen reactions; Circuits; Computer simulation; Electron traps; Hydrogen; Laboratories; Packaging; Propulsion; Space technology; Spontaneous emission; Thermal stresses; Bipolar oxide; dose rate; enhanced low dose rate sensitivity (ELDRS); hydrogen; interface traps; radiation-induced;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2034154
