Title :
Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory
Author :
Oldham, Timothy R. ; Friendlich, M. ; Carts, M.A. ; Seidleck, C.M. ; LaBel, Kenneth A.
Author_Institution :
Perot Syst. Gov. Services, Inc., Greenbelt, MD, USA
Abstract :
We have compared the endurance of irradiated commercial NAND flash memories with that of unirradiated controls. Radiation exposure has little or no effect on the endurance of flash memories. Results are discussed in light of the relevant models for electron and hole trapping.
Keywords :
electron traps; flash memories; hole traps; logic gates; electron trapping; hole trapping; irradiated NAND flash memory; radiation exposure effect; unirradiated controls; Charge carrier processes; Electron traps; Error correction codes; Flash memory; Manufacturing; NASA; Nonvolatile memory; Power supplies; Space technology; System testing; Endurance; flash memory; ionizing radiation; reliability;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2034463
