Ir/n-ZnO Schottky Barrier Ultraviolet Photodiodes

Author

Young, S.J.

Author_Institution

Dept. of Electron. Eng., Nat. Formosa Univ., Yunlin, Taiwan

Volume

11

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

1129

Lastpage

1133

Abstract

ZnO Schottky barrier photodiodes (PDs) with Iridium (Ir) contact electrodes were fabricated in this study. We could reduce the reverse leakage current and improve the performance of ZnO ultraviolet (UV) PDs by using 500^°C, O₂ annealing. This could be attributed to the formation of IrO₂ after thermal annealing. With -1 V applied bias, it was found that the reverse current for nonannealed and 500^°C, O₂ annealed PDs were 4.46 × 10^{- 9} and 8.87 × 10^-11 A, respectively. It was also found that we could enhance UV-to-visible rejection ratio, reduce noise level, and enhance the detectivity by high-temperature oxygen annealing.

Keywords

II-VI semiconductors; Schottky diodes; annealing; electrochemical electrodes; iridium compounds; leakage currents; photodetectors; photodiodes; wide band gap semiconductors; zinc compounds; Ir-ZnO; IrO₂; Schottky barrier ultraviolet photodiode; UV-to-visible rejection ratio; contact electrode; high-temperature oxygen annealing; leakage current; temperature 500 degC; thermal annealing; voltage -1 V; Ir; Schottky; ZnO; photodiodes; ultraviolet;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2010.2083649

Filename

5594608