Transient Response of Charge Collection by Single Ion Strike in 4H-SiC MESFETs

Author

Onoda, Shinobu ; Iwamoto, Naoya ; Ono, Shuich ; Katakami, Shuji ; Arai, Manabu ; Kawano, Katsuyasu ; Ohshima, Takeshi

Author_Institution

Japan Atomic Energy Agency (JAEA), Takasaki, Japan

Volume

56

Issue

6

fYear

2009

Firstpage

3218

Lastpage

3222

Abstract

The radiation damage of 4H-SiC Metal Semiconductor Field Effect Transistors (MESFETs) due to gamma rays was studied. The threshold voltage and Schottky property of gate contact varied only slightly after absorbed dose of 10.4 MGy(SiC). In addition, the transient response of charge collection was studied by using transient ion beam induced current (TIBIC) system. It was found that the collected charge was several orders of magnitudes higher than the charge induced in SiC by direct ionization. The most likely explanation of the enhanced charge collection was the bipolar and the channel modulation effects.

Keywords

Schottky effect; Schottky gate field effect transistors; gamma-ray effects; silicon compounds; transients; wide band gap semiconductors; 4H-SiC MESFET; 4H-SiC metal semiconductor field effect transistors; Schottky property; SiC; bipolar effects; channel modulation effects; charge collection transient response; current-voltage characteristics; direct ionization process; gamma ray radiation damage; gate contact; radiation absorbed dose 10.4 MGy; threshold voltage; transient ion beam induced current system; Buffer layers; Epitaxial layers; FETs; Gallium arsenide; Ion beams; MESFETs; Power amplifiers; Radio frequency; Silicon carbide; Transient response; 4H-SiC; metal semiconductor field effect transistor (MESFET); single ion strike; transient ion beam induced current (TIBIC);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2032395

Filename

5341370