Title :
Transient Response of Charge Collection by Single Ion Strike in 4H-SiC MESFETs
Author :
Onoda, Shinobu ; Iwamoto, Naoya ; Ono, Shuich ; Katakami, Shuji ; Arai, Manabu ; Kawano, Katsuyasu ; Ohshima, Takeshi
Author_Institution :
Japan Atomic Energy Agency (JAEA), Takasaki, Japan
Abstract :
The radiation damage of 4H-SiC Metal Semiconductor Field Effect Transistors (MESFETs) due to gamma rays was studied. The threshold voltage and Schottky property of gate contact varied only slightly after absorbed dose of 10.4 MGy(SiC). In addition, the transient response of charge collection was studied by using transient ion beam induced current (TIBIC) system. It was found that the collected charge was several orders of magnitudes higher than the charge induced in SiC by direct ionization. The most likely explanation of the enhanced charge collection was the bipolar and the channel modulation effects.
Keywords :
Schottky effect; Schottky gate field effect transistors; gamma-ray effects; silicon compounds; transients; wide band gap semiconductors; 4H-SiC MESFET; 4H-SiC metal semiconductor field effect transistors; Schottky property; SiC; bipolar effects; channel modulation effects; charge collection transient response; current-voltage characteristics; direct ionization process; gamma ray radiation damage; gate contact; radiation absorbed dose 10.4 MGy; threshold voltage; transient ion beam induced current system; Buffer layers; Epitaxial layers; FETs; Gallium arsenide; Ion beams; MESFETs; Power amplifiers; Radio frequency; Silicon carbide; Transient response; 4H-SiC; metal semiconductor field effect transistor (MESFET); single ion strike; transient ion beam induced current (TIBIC);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2032395
