Single-Event Transient Error Characterization of a Radiation-Hardened by Design 90 nm SerDes Transmitter Driver

Author

Armstrong, S.E. ; Olson, B.D. ; Popp, J. ; Braatz, J. ; Loveless, T.D. ; Holman, W.T. ; McMorrow, D. ; Massengill, L.W.

Author_Institution

NAVSEA Crane, Crane, IN, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3463

Lastpage

3468

Abstract

The analysis and measurement of a radiation hardened by design 3.125 Gbps SerDes transmitter driver fabricated in commercial 90 nm CMOS is presented. The transmit driver is implemented in thick oxide 2.5 V devices. Testing and simulation of laser-induced single-event transients of a fabricated driver section are discussed. A highly-flexible data collection technique that allows post-processing of data for different error types and thresholds within a single data set is presented. This effort represents the first single-event effects measurement and analysis on a highly-scaled analog/RF CMOS circuit element operating at GHz frequencies. Sensitive nodes are identified through experiment and simulation.

Keywords

CMOS integrated circuits; driver circuits; error detection; radiation hardening; RF CMOS circuit element; SerDes transmitter driver; data collection technique; device simulation; error characterization; laser-induced single-event transients; radiation-hardening; sensitive nodes; size 90 nm; thick oxide devices; Absorption; CMOS analog integrated circuits; CMOS technology; Cranes; Laboratories; Radiation effects; Radio frequency; Radiofrequency identification; Transmitters; Voltage; Serializer-deserializer; single-event effects; single-event transients; space applications; two-photon absorption;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2033924

Filename

5341372