Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation

We investigate a novel implementation of junction isolation to harden a 200 GHz SiGe:C HBT technology without deep trench isolation against single event effects. The inclusion of isolation is shown to have no effect on the dc or ac performance of the nominal device, and likewise does not reduce the HBTs inherent tolerance to TID radiation exposure on the order of a Mrad. A 69% reduction in total integrated charge collection across a slice through the center of the device was achieved. In addition, a 26% reduction in collected charge is reported for strikes to the center of the emitter. 3-D NanoTCAD simulations are performed on RHBD and control device models yielding a good match to measured results for strikes from the emitter center to 8 ¿m away. This result represents one of the most effective transistor layout-level RHBD approaches demonstrated to date in SiGe.